This document describes the features and characteristics of the 13 Push-Pull AY 100.0 8.0 160.0 0.38 C/W 65 5.4 34.00 2.0 60 0.17 16.00 13.5 440 0.30 70 and other products.
The document describes the Polyfet LY402, a silicon VOMOS and LDMOS silicon gate enhancement mode transistor. It is specifically designed for broadband RF applications such as military radios, cellular and paging amplifier base stations, broadcast FM/AM, MRI, laser drivers, and others. The device features low feedback and output capacitances resulting in high input impedance and efficiency.
| Total Junction to Case Thermal Dissipation | 440 Watts |
|---|---|
| Maximum Storage Temperature | -65 to 150 °C |
| Maximum Drain Current | 13.5 A |
| Drain to Source Voltage | 70 V |
| Gate to Source Voltage | 20 V |
| Drain Breakdown Voltage (Bvdss) | 65 V |
| Zero Bias Drain Current (Idss) | 2.0 mA |
| Gate Leakage Current (Igss) | 1 uA |
| Forward Transconductance (gm) | 5.4 Mho |
| Saturation Resistance (Rdson) | 0.17 Ohm |
| Saturation Current (Idsat) | 34.00 Amp |
| Common Source Input Capacitance (Ciss) | 160.0 pF |
| Common Source Feedback Capacitance (Crss) | 8.0 pF |
| Common Source Output Capacitance (Coss) | 100.0 pF |
The device is suitable for military radios, cellular and paging amplifier base stations, broadcast FM/AM, MRI, laser drivers, and others.
The device provides a push-pull output of 220.0 Watts.
The typical drain efficiency is 60% when Idq= 0.80 A, Vds = 28.0V, and F= 500 Mhz.
The device has a VSWR load mismatch tolerance of 20:1.