The product is an ultrafast recovery diode with low losses, high frequency and high pulsed current operation, low leakage current and so on.
This document provides technical specifications for the STTH120R04TV series of ultrafast recovery diodes. The devices utilize ST's new 400 V planar Pt doping technology and are designed for switching mode base drive and transistor circuits, such as welding equipment.
The datasheet covers absolute ratings including a repetitive peak reverse voltage of 400 V and an RMS forward current of 140 A per diode. It also details dynamic characteristics like reverse recovery time and softness factor, along with thermal resistance values for the ISOTOP insulated package.
| Repetitive peak reverse voltage | 400 V |
|---|---|
| RMS forward current per diode | 140 A |
| Average forward current (Tj=73°C) | 6 A |
| Reverse recovery time (typical) | 31 ns |
| Forward voltage drop (Typ, Tj=100°C) | 1.2 V |
| Junction to case thermal resistance (Per diode) | 0.8 °C/W |
The maximum operating junction temperature is 150 °C.
The typical reverse recovery time is 31 ns.