This document describes the features and benefits of the STTH200R04TV ultrafast recovery diode, including ultrafast speed, very low switching losses, high frequency and high pulsed current operation, and low leakage current.
This document provides the technical specifications for the STTH200R04TV ultrafast recovery diode, which utilizes ST's new 400 V planar Pt doping technology. It is specifically suited for switching mode base drive and transistor circuits, such as welding equipment, offering very low switching losses and high frequency operation.
The datasheet details absolute ratings including a repetitive peak reverse voltage of 400 V and an RMS forward current of 150 A per diode. It also covers dynamic characteristics like reverse recovery time and charges, thermal resistance values, and provides mechanical dimensions for the ISOTOP package.
| Repetitive peak reverse voltage | 400 V |
|---|---|
| RMS forward current (per diode) | 150 A |
| Reverse recovery time (typical) | 40 ns |
| Storage temperature range | -65 to +150 °C |
The maximum operating junction temperature is 150 °C.
The base quantity delivery mode weighs 27g.