STMicroelectronics VND810PEP-E Double Channel High-Side Driver Datasheet

This document introduces the features of VND810PEP-E, including CMOS compatible inputs, open drain status outputs, open-load detection, undervoltage and overvoltage shutdown, loss of ground protection, very low standby current, reverse battery protection.


STMicroelectronics VND810PEP-E Double Channel High-Side Driver Datasheet - cover page
Brand
STMicroelectronics
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
24
File format
PDF
File size
380 KB
Published
08 August, 2012
Updated
01 October, 2023
MD5 checksum
AB01857F24040A0F843466AA0B665D32

About this manual

The VND810PEP-E is a monolithic device made using STMicroelectronics ViPower MOS Technology, intended for driving multiple loads connected to ground. It features two channels with open-load detection in both on and off states, shorted load protection, undervoltage/overvoltage shutdown, and reverse battery protection.

The document provides detailed electrical specifications including absolute maximum ratings, thermal data per island, power output characteristics, and logic input levels. It also covers application information such as GND protection networks against reverse battery, load dump protection, MCU I/O protection strategies, and package mechanical data for the PowerSSO-12 format.

What's inside

  • Block diagram and pin description
  • Absolute maximum ratings
  • Thermal data
  • Electrical characteristics
  • GND protection network against reverse battery
  • Load dump protection
  • MCU I/O protection
  • Open-load detection in off-state
  • Package and PC board thermal data
  • Packing information

Specifications

Shutdown temperature (typical)175 C

Frequently asked questions

Does the device detect open loads in both states?

Yes, it detects open-load conditions in both the on and off-state.

What is the maximum junction operating temperature?

The junction operating temperature is internally limited.

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