74V2G132 is a high-speed CMOS dual 2-input NAND gate fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. Pin configuration and function are the same as those of the 74V2G00 but the 74V2G132 has hysteresis. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.
The 74V2G132 is an advanced high-speed CMOS single 2-input NAND gate fabricated with sub-micron silicon gate and double-layer metal wiring CMOS technology. The device features a typical propagation delay of 3.0ns at Vcc = 5V and low power dissipation of 1mW (max) at Ta = 25°C.
| Typical Propagation Delay (tpp) | 3.0ns at Vcc = 5V |
|---|---|
| Maximum Power Dissipation (Pd) | 1mW at Ta = 25°C |
| Typical Hysteresis Voltage (Vh) | 800mV at Vcc = 4.5V |
| Operating Voltage Range (Vcc) | 2V to 5.5V |
| Operating Temperature Range (Extended) | -55 to 125 °C |
The typical hysteresis voltage is 800mV when Vcc is 4.5V.
Yes, the device can accept 0 to 7V on inputs regardless of supply voltage and is suitable for interfacing 5V to 3V.
The SOT23-8L package is listed as an order code option.