This is an RF broadband power amplifier demonstration board using 2 x SD2932 N-channel enhancement-mode lateral MOSFETs. The board features include: frequency 87.5-108MHz, supply voltage 48V, output power 650W, gain 19.5dB, efficiency 73%, harmonics <-36dBc, gain flatness ±0.5dB.
The STEVAL-TDROO9V1 is a broadband RF power amplifier demonstration board designed for FM broadcast radio transmitters operating in the 87.5 to 108 MHz frequency range. It utilizes two SD2932 N-channel enhancement-mode lateral MOSFETs to achieve a minimum output power of 650 W and a gain of 19.5 dB. The board is designed in cooperation with InnovAction s.r.l. in Italy.
Key features include excellent thermal stability, harmonics suppression below -36 dBc, and a minimum efficiency of 73%. The board incorporates input and output directional couplers for forward and reflected power measurements, as well as latching protection with a manual reset pin and an ultrafast alarm for over-reflected power conditions.
| Frequency range | 87.5 - 108 MHz |
|---|---|
| Supply voltage | 48 V |
| Output power | 650 W min. |
| Gain | 19.5 dB min. |
| Efficiency | 73 % min. |
| Harmonics | < -36 dBc |
| Gain flatness | + 0.5 dB max |
| Operating base plate temperature | 0 to +70 °C |
The board uses 2 x SD2932 N-channel enhancement-mode lateral MOSFETs.
The board operates over the frequency range of 87.5 to 108 MHz.
The device provides a minimum output power of 650 W.
The maximum operating base plate temperature is +70 °C.