This document describes the absolute maximum ratings, thermal characteristics, electrical characteristics, and typical performance characteristics of BAT54SWT1G/BAT54CWT1G Schottky diodes produced by Fairchild Semiconductor Corporation in 2005.
This document is a datasheet for the Fairchild Semiconductor BAT54SWT1G and BAT54CWT1G Schottky diodes. It provides connection diagrams, marking codes, and absolute maximum ratings including a maximum repetitive reverse voltage of 30 V and an average rectified forward current of 200 mA.
The datasheet details electrical characteristics such as breakdown voltage, forward voltage drop at various currents, reverse leakage current, and total capacitance. It also includes typical performance characteristics graphs showing forward voltage versus temperature, reverse leakage current versus temperature, and capacitance versus reverse bias voltage.
| Maximum Repetitive Reverse Voltage | 30 V |
|---|---|
| Average Rectified Forward Current | 200 mA |
| Non-repetitive Peak Forward Surge Current | 600 mA |
| Storage Temperature Range | -65 to +125 °C |
| Operating Junction Temperature | -65 to +125 °c |
| Power Dissipation | 232 mw |
| Thermal Resistance, Junction to Ambient | 430 °CAV |
| Breakdown Voltage | 30 V |
| Forward Voltage (Ip = 100mA) | 0.8 Vv |
| Reverse Leakage (VR = 25V) | 2 LA |
| Total Capacitance | 10 pF |
| Reverse Recovery Time | 5.0 ns |
The maximum repetitive reverse voltage is 30 V.
The average rectified forward current is 200 mA.
The operating junction temperature range is from -65 to +125 °C.
The total capacitance is 10 pF when Vr is 0V and f is 1.0MHz.