This is a document about Schottky Barrier Rectifiers. The document describes the features and characteristics of the 1N5817 - 1N5819 models, including 1.0 ampere operation at 90°C with no thermal runaway, suitable for low voltage, high frequency inverters, free wheeling, and polarity protection applications.
This document provides technical specifications for the Fairchild Semiconductor 1N5817, 1N5818, and 1N5819 Schottky Barrier Rectifiers. These devices are designed for use in low voltage, high frequency inverters, free wheeling applications, and polarity protection circuits.
The devices are rated for an average rectified forward current of 1.0 A.
The diodes can handle a non-repetitive peak surge current of 25 A.
The operating junction and storage temperature ranges from -65 to +125 °C.