SSM1N45B is a 450V N-Channel MOSFET product produced using Fairchild's proprietary planar DMOS technology. This product features low on-state resistance, superior switching performance, and high energy pulse withstand capability, making it well-suited for electronic ballasts based on a half bridge configuration.
This document provides design specifications and electrical characteristics for the SSM1N45B, an N-channel enhancement mode power MOSFET produced using Fairchild's proprietary planar DMOS technology. The device is designed to minimize on-state resistance while providing superior switching performance and withstanding high energy pulses in avalanche and commutation modes.
| Drain-Source Voltage (V_DSS) | 450 V |
|---|---|
| Continuous Drain Current (I_D) at T_C = 25°C | 0.5 A |
| Continuous Drain Current (I_D) at T_C = 100°C | 0.32 A |
| Pulsed Drain Current (I_DM) | 40 A |
| Gate-Source Voltage (V_GS) | +50 V guaranteed |
| Power Dissipation (T_A = 25°C) | 0.9 W |
The maximum single pulsed avalanche energy is 108 mJ.
The typical gate charge is 6.5 nC.