This document describes the features and characteristics of the NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor manufactured in January 1997.
This document is a technical datasheet for the Fairchild Semiconductor NDS355AN, an N-Channel Logic Level Enhancement Mode Field Effect Transistor. The device utilizes proprietary SuperSOT™-3 technology to minimize on-state resistance and is designed for low voltage applications in battery-powered circuits such as notebook computers and portable phones.
| Drain-Source Voltage (Voss) | 30 V |
|---|---|
| Maximum Drain Current - Continuous | 1.7 A |
| Package Type | SuperSOT™-3 |
| Operating Temperature Range | -55 to 150 °C |