FQPF13N06L is a 60V logic N-Channel MOSFET manufactured by Fairchild Semiconductor Corporation. It uses Fairchild's proprietary planar stripe DMOS technology, which minimizes on-state resistance, provides superior switching performance, and withstands high energy pulses in the avalanche and commutation mode. This device is well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
This document is a datasheet for the Fairchild FQPF13N06L, an N-channel enhancement mode power field effect transistor. Produced using Fairchild's proprietary planar stripe DMOS technology, the device is optimized for low voltage applications such as automotive systems, DC/DC converters, and high-efficiency switching in portable products. Key features include a low on-state resistance of 0.119 ohms, low gate charge, and fast switching capabilities.
| Drain-Source Voltage | 60 V |
|---|---|
| Continuous Drain Current (25°C) | 10 A |
| Continuous Drain Current (100°C) | 7 A |
| Pulsed Drain Current | 40 A |
| Gate-Source Voltage | +20 V |
| Single Pulsed Avalanche Energy | 90 mJ |
| Power Dissipation (25°C) | 24 W |
| Operating Temperature Range | -55 to +175 °C |
| On-Resistance (Vgs=10V, Id=5A) | 0.11 ohms |
| Total Gate Charge | 6.4 nC |
| Package Type | TO-220F |
The maximum junction temperature rating is 175°C.
Yes, the device is 100% avalanche tested.
The typical gate charge is 4.8 nC.