2N7002LT1 is a N-channel SOT-23 package MOSFET produced by LESHAN RADIO, with a maximum drain-source voltage of 60V, a maximum drain current of 115mA, a maximum gate-source voltage of 40V, and a maximum total dissipation power of 225mW.
This document is a datasheet for the L2N7002LT1, an N-Channel Small Signal MOSFET packaged in SOT-23 (TO-236AB). The device is rated for a drain-source voltage of 60V and a continuous drain current of 115 mA. It features a static drain-source on-state resistance (RDS(on)) of 7.5 Ohms and is designed for low-power switching applications.
| Drain-Source Voltage | 60 Vdc |
|---|---|
| Drain Current (Continuous) | 115 mAdc |
| Package Type | SOT-23 (TO-236AB) |
| Static Drain-Source On-State Resistance | 7.5 Ohms |
| Gate Threshold Voltage | 1.0 to 2.5 Vdc |
| Input Capacitance | 50 pF |
The maximum junction and storage temperature is +150°C.
The total device dissipation is 225 mW on an FR-5 board at 25°C.
The on-state drain current is typically 500 mA.