This document describes the features and characteristics of BCW 29 and BCW 30 general purpose PNP surface mount transistors, including their power dissipation, packaging form, maximum ratings, and basic parameters.
This document is a datasheet for the BCW 29 and BCW 30, which are surface mount Si-Epitaxial Planar Transistors. The devices are available in a plastic SOT-23 case and are designed for general-purpose applications.
The datasheet provides maximum ratings such as a power dissipation of 250 mW and a collector current of 100 mA. It also lists key electrical characteristics including cutoff currents, saturation voltages, DC current gain, and thermal resistance. This manual is written in German.
| Case type | Plastic SOT-23 |
|---|---|
| Power dissipation | 250 mW |
| Collector current (DC) | 100 mA |
| Peak Collector current | 200 mA |
| Junction temperature | 150°C |
| Storage temperature | -65...+150°C |
| Collector-Base cutoff current (Typical) | 10 nA |
| Gain-Bandwidth Product | 100 MHz |
| Thermal resistance junction to ambient air | 420 K/W |
The recommended complementary NPN transistors are BCW 31 and BCW 32.
BCW 29 is marked as Cl and BCW 30 is marked as C2.