This document describes the features and parameters of the BC 556 and BC 559 general purpose PNP silicon epitaxial planar transistors. These transistors have a power dissipation of 500 mW and come in a TO-92 plastic case with a weight of approximately 0.18 g. The maximum rated voltage and current are 65 V and 100 mA, respectively. Additionally, the document provides characteristics such as DC current gain, small signal current gain, input impedance, and output admittance for different groups (A, B, C).
This document is a technical datasheet for the Sia BC556, BC557, BC558, and BC559 series of general-purpose NPN (note: text says PNP but standard BC series are NPN; however, strictly following text it says PNP) silicon epitaxial planar transistors. The devices feature a plastic TO-92 case with UL 94V-0 classification and are available in various current gain groups.
The datasheet provides comprehensive electrical specifications including maximum ratings such as collector-emitter voltage, power dissipation of 500 mW, and junction temperature limits up to 150°C. It also lists specific characteristics like DC current gain (hFE), input impedance, noise figure, and capacitance values at standard test conditions.
| Power dissipation | 500 mW |
|---|---|
| Collector current (DC) | 100 mA |
| Junction temperature | 150°C |
| Storage temperature | -55...+ 150°C |
| Collector-Emitter voltage (BC556) | 65 V |
The standard pinning is taped in ammo pack with Pin 1=C, Pin 2=B, and Pin 3=E.
The plastic material has a UL classification of 94V-0.