The FLM5964-18F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.
The document describes the Eudyna FLM5964-18F, a power Gallium Arsenide (GaAs) Field Effect Transistor designed for standard communication bands. It features an internally matched impedance of 50 ohms and is housed in a hermetically sealed metal-ceramic package.
| Operating Frequency Range | 5.9 ~ 6.4GHz |
|---|---|
| Typical Output Power | 43.0dBm |
| Typical Gain | 10.0dB |
| Typical PAE | 37% |
| Drain-Source Voltage Max | 15 V |
| Gate-Source Voltage Max | 5 V |
The drain-source operating voltage should not exceed 10 volts.
The output power ranges from a minimum of 42.0 dBm to a maximum of 43.0 dBm.
The typical power-added efficiency is 37% when matched to a 50 ohm system.