This document is a data sheet for a 3.3V 1 Megabit (128K x 8-Bit) 28LV011 EEPROM, which introduces its features and characteristics, including 3.3V low voltage operation, 128K x 8-bit EEPROM, RAD-PAK® radiation hardening, total dose hardness, excellent single event effects, package, address access time, high endurance, page write mode, automatic programming, and low power dissipation.
The document describes the Maxwell Technologies 28LV011, a high-density 3.3V 1 Megabit EEPROM designed for demanding space applications. It features Rap-Pak® radiation-hardened packaging that provides greater than 100 krad (Si) total dose tolerance without requiring external box shielding.
| Memory Capacity | 1 Megabit (128K x 8-Bit) |
|---|---|
| Supply Voltage | 3.0 V to 3.6 V |
| Operating Temperature Range | -55 °C to +125 °C |
| Total Dose Hardness | > 100 krad (Si) |
| Package Type | 32 Pin Rap-Pak flat pack or DIP |
The device offers address access times of either 200 ns or 250 ns.
No, its Rap-Pak® packaging technology incorporates internal radiation shielding.