The document contains an introduction to the features and characteristics of a product.
The UTRON UT6264B is an 8K x 8-bit low power CMOS static random access memory (SRAM) organized as 8,192 words by 8 bits. Fabricated using high performance and high reliability CMOS technology, it operates from a single +5V power supply with all inputs and outputs fully TTL compatible.
The device is designed for high-speed and low-power applications, particularly well-suited for battery back-up nonvolatile memory usage. It features three-state outputs and offers various versions optimized for different access times (35ns or 70ns) and standby current requirements.
| Organization | 8K x 8 Bit (65,536 bits) |
|---|---|
| Access Time | 35/70ns (max.) |
| Operating Supply Current | 60 mA (typical) |
| Standby Current | 3mA (typical) normal |
| Power Supply Voltage | Single 5V |
| Operating Temperature | 0 to +70 C |
| Storage Temperature | -65 to +150 C |
The minimum data retention voltage is 2V.
Yes, all inputs and outputs are fully TTL compatible.
The device is available in 28-pin 600 mil PDIP or 28-pin 330 mil SOP packages.