This document provides a technical specification sheet for the 2SK1204 Silicon N-Channel MOS FET. It outlines the device's pin configuration and physical dimensions.
The datasheet details the Absolute Maximum Ratings, including limits for drain-source voltage, gate-source voltage, and operating temperatures. It also lists key electrical characteristics such as breakdown voltages, on-state resistance, capacitance values, and switching times.
| Drain-Source Voltage (Voss) | 900 V |
|---|---|
| Gate-Source Voltage (Vess) | +20 V |
| Drain Current (In) | 8 A |
| Channel Dissipation | 100 W |
| Channel Temperature (Ter) | -55~+150 C |
| Input Capacitance (Cis) | 1800 pF |
The absolute maximum drain-source voltage rating is 900 V.
The maximum continuous drain current rating is 8 A.
The maximum allowed channel temperature is 150 C.