This document is about 2SA1037K supplier
The 2SA1037K and 2SA1576 are complementary PNP silicon transistors offered by ROHM. They are designed for general small‑signal amplification and are supplied in an SC‑59A (SOT‑23) surface‑mount package.
The datasheet lists key electrical parameters such as collector‑emitter voltage, collector current, and breakdown voltages, as well as maximum ratings for temperature and power dissipation. Characteristic curves illustrate the device behavior over a range of currents and voltages. This manual is written in Japanese.
| Collector‑Base Voltage (Vcbo) | -50 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | -40 V |
| Emitter‑Base Voltage (Vebo) | -5 V |
| Maximum Collector Current (Ic) | 1900 mA |
| Collector Power Dissipation (Pc) | 200 mW |
| Junction Temperature (Tj) | 125 °C |
| Package Type | EIAJ SC‑59A |
The maximum collector current is 1900 mA.
The collector‑base breakdown voltage (Vcbo) is -50 V.
They are supplied in an EIAJ SC‑59A (SOT‑23) surface‑mount package.