This document describes a series of power MOSFETs with ultra-low RDS(on). These products are packaged in isolated hermetic packages and are ideally suited for low voltage applications such as battery powered voltage power supplies, motor controls, dc to dc converters, and synchronous rectification. They have ultra-low conduction loss and low gate charge, allowing for smaller heat sinking and simpler drive circuitry.
The OM series of hermetic packaged MOSFETs are designed for low‑voltage applications such as battery‑powered supplies, motor controls, DC‑DC converters, and synchronous rectification. They feature ultra low on‑resistance, low gate charge, and are available in screened MIL‑S‑19500, TX, TXV, and S level packages.
Key specifications include drain‑source voltages of 50 V, 60 V, and 100 V, continuous drain currents up to 75 A, and static on‑resistance as low as 0.016 Ω. Devices are offered in TO‑254AA and TO‑258AA hermetic metal packages with optional ceramic feedthroughs.
| Maximum Drain‑Source Voltage (VDS) | 100 V |
|---|---|
| Static On‑Resistance (RDS(on)) | 0.025 Ω |
The OM55N10SA is rated for a maximum drain‑source voltage of 100 V.
The OM75N06SC has a static on‑resistance of 0.016 Ω.
They are offered in hermetic metal TO‑254AA and TO‑258AA packages, with optional ceramic feedthroughs.