This datasheet provides detailed information about GR3281H (32K x 8) NON-VOLATILE RAM, including read/write clock, timing, dimensions, etc.
The GR3281H is an industrial‑temperature‑range, 32768‑word by 8‑bit (32K × 8) non‑volatile CMOS static RAM fabricated with advanced silicon‑gate technology and a high‑reliability lithium power cell. It conforms to JEDEC pin‑out standards and offers fast read/write cycles (70 ns) with low power consumption.
The device is suited for data‑loggers, process‑control, automation, robotics and user‑definable lookup tables. It retains data for up to ten years without external power, and the power‑down circuit shuts off in a maximum of 15 µs. Disposal must follow the provided instructions, returning the device to Greenwich Instruments for safe handling.
| Memory organization | 32768 word by 8 bits (32K × 8) |
|---|---|
| Read cycle time | 70 ns |
| Write cycle time | 70 ns |
| Dimensions (mm) | 37 mm |
| Supply voltage (Vdd) typical | 4.75 V – 5.5 V |
| Supply voltage (Vdd) absolute max | -0.3 V to 7.0 V |
| Operating temperature range | -40 °C to +85 °C |
| Active supply current | 30 mA |
| Deselected supply current | 1.0 mA |
| Data retention time | 10 years |
| Power‑down time | max 15 µs |
The GR3281H operates from –40 °C to +85 °C.
It can retain data for up to ten years, limited by the lithium cell life.
Both read and write cycles are specified as 70 ns.
The device operates with a supply voltage from 4.75 V to 5.5 V (typical) and an absolute maximum of –0.3 V to 7.0 V.