This document describes the timing characteristics of GR881-H (8K x 8) non-volatile RAM, including read and write cycle times, address, enable, and output-related parameters.
The GR881-H is an industrial‑grade, 8192‑word by 8‑bit (8K × 8) non‑volatile CMOS static RAM. It features a fully automatic power‑down circuit referenced at 4.5 V, fast write protection, and a high‑reliability lithium power cell that allows data retention for up to ten years without external power.
Its pin‑out conforms to JEDEC standards, making it compatible with standard static RAM interfaces. Typical applications include data loggers, process control, automation, robotics, and user‑definable lookup tables. Disposal must follow the provided instructions, with devices returned to Greenwich Instruments Ltd. for proper handling.
| Memory organization | 8192 words × 8 bits (8K × 8) |
|---|---|
| Operating temperature range | -40 °C to +85 °C |
| Access time (tACC) | 70 ns |
| Read cycle time (tRC) | 70 ns |
| Write cycle time (tWC) | 70 ns |
| Data retention time | 10 years |
| Power‑down time | max 15 µs |
The GR881-H operates from –40 °C up to +85 °C.
It can retain data for up to ten years thanks to its internal lithium cell.
Power‑down takes a maximum of 15 µs from 5 V to 0 V.
The device provides 8192 words by 8 bits (8 K × 8).