This document describes the features and characteristics of the BP 104 F and BP 104 FS silicon PIN photodiode products, including suitability for 950 nm applications, short switching time, high packing density DIL plastic package, etc.
The BP 104 series are silicon pin photodiodes with a built‑in daylight‑filter coating, optimized for 950 nm operation. They are intended for IR remote‑control, light‑interrupter, and other optoelectronic applications where high packing density and short response time are required.
Key specifications include a typical 20 ns rise/fall time, reverse voltage of 20 V, total power dissipation of 150 mW, and a spectral range from 800 nm to 1100 nm. The devices are supplied in a DIL plastic package (2.20 × 2.20 mm) weighing about 0.1 g and are compatible with vapor‑phase and IR‑reflow soldering processes. This manual is written in German.
| Typical switching time | 20 ns |
|---|---|
| Reverse voltage (breakdown) | 20 V |
| Weight | 0.1 g |
They exhibit a typical switching (rise/fall) time of 20 ns.