TE tmCH T431616D/E is a SDRAM memory module produced by TE tmCH company. It has a fast access time of 5/6/7ns, a fast clock rate of 200/166/143MHz, a standard and low power self-refresh mode, an internal pipelined structure, 512K word x 16-bit x 2-bank, programmable mode registers, LDQM and UDQM controlled single bytes, automatic refresh and self-refresh, 4096 refresh cycles/64ms, CKE power down mode, JEDEC standard +3.3V±0.3V power supply, LVTTL interface, 50-pin 400 mil plastic TSOP II package, 60-ball, 6.4x10.1mm VFBGA package, TSOP II and VFBGA both offer lead-free packaging, and T431616E has low operating current.
The T431616D/E is a high‑speed CMOS synchronous DRAM offering 16 Mbits of memory organized as two 512 K‑word × 16‑bit banks. It supports fast access times of 5 ns, 6 ns or 7 ns and clock rates of 200 MHz, 166 MHz or 143 MHz, making it suitable for high‑performance PC applications.
The device is available in 50‑pin TSOP‑II and 60‑ball VFBGA packages, includes programmable mode registers, and provides features such as auto‑refresh, self‑refresh, and power‑down modes. Detailed pin descriptions, timing parameters and command definitions are provided for system designers.
| Memory capacity | 16 Mbits |
|---|---|
| Organization | 2 × 512 K word × 16 bit |
| Access time | 5 ns / 6 ns / 7 ns |
| Clock rate | 200 MHz / 166 MHz / 143 MHz |
| CAS latency | 1, 2, or 3 |
| Burst length | 1, 2, 4, 8, or full page |
| Supply voltage | +3.3 V ±0.3 V |
| Refresh cycles | 4096 cycles per 64 ms |
| Power‑down mode | CKE power‑down mode |
The device operates at 200 MHz, 166 MHz or 143 MHz.
CAS latency can be set to 1, 2, or 3.
It performs 4096 refresh cycles every 64 ms.