This document introduces the SRAM product T15V2M08A from Taiwan Memory Technology, Inc. The product features low power consumption, high-speed access, and a wide range of power supply voltages.
The T15V2M08A SRAM provides 256 K × 8 bits of static memory in a low‑power CMOS process. It operates from a single +2.7 V to +3.6 V supply, offers TTL‑compatible address and data lines, and retains data down to 2 V. Power consumption is 40 mA during active operation and only 5 µA in standby.
The device is offered in 32‑pin TSOP‑I (8 × 20 mm), 32‑pin TSOP‑I (8 × 13.4 mm) and 48‑pin CSP packages. Key electrical characteristics include access times of 55 ns, 70 ns or 100 ns, input capacitance of 6 pF, output capacitance of 8 pF, and operating temperature range of –40 °C to +85 °C.
| Access time | 55/70/100 ns |
|---|---|
| Supply voltage | 2.7 V to 3.6 V |
| Active power consumption | 40 mA at 55 ns |
| Stand‑by power consumption | 5 µA |
| Package options | 32‑pin TSOP‑I (8×20 mm), 32‑pin TSOP‑I (8×13.4 mm), 48‑pin CSP |
| Storage temperature range | -55 °C to +150 °C |
| Input capacitance | 6 pF |
| Output capacitance | 8 pF |
| Read cycle time | 55‑100 ns |
| Write cycle time | 55‑100 ns |
It operates from 2.7 V to 3.6 V.
The standby power consumption is 5 µA.
It is offered in 32‑pin TSOP‑I (8×20 mm), 32‑pin TSOP‑I (8×13.4 mm) and 48‑pin CSP packages.
The device provides access times of 55 ns, 70 ns, or 100 ns depending on the version.