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The Telefunken BAW 24‑27 series are silicon epitaxial planar diodes intended for high‑speed switching in core memory applications. The datasheet provides absolute maximum ratings, typical forward and reverse characteristics, and packaging details.
The document also describes tape and reel packaging options for axial‑lead and surface‑mount versions, including dimensions, tape specifications, and acceptable missing‑component tolerances.
| Reverse voltage (BAW 24‑BAW25) | 50 V |
|---|---|
| Reverse voltage (BAW 26‑BAW27) | 75 V |
| Forward current (typical) | 600 mA |
| Average forward current | 300 mA |
| Junction temperature | 200 °C |
| Storage temperature range | -65 °C to 200 °C |
| Forward voltage at 10 mA (BAW 24/26) | 0.8 V |
| Reverse current at 40 V (BAW 24/25) | 100 nA |
The maximum reverse voltage is 50 V.
Typical forward voltage is about 0.8 V at 10 mA.
They can be stored from –65 °C up to 200 °C.
They are supplied in taped form according to IEC 286‑1, with coloured taps indicating the cathode side.