2SK2072-01L,S is a high voltage and high power MOSFET produced by Fujitsu. It has the characteristics of high switching speed, low on-resistance, no secondary breakdown, low driving power, high voltage, VGS = ± 30V guarantee, avalanche proof, etc. It is suitable for switching regulators, UPS, DC-DC converters, general purpose power amplifiers and other applications.
The 2SK2072-01L is a high‑speed switching N‑channel MOSFET featuring low on‑resistance, low driving power, and avalanche‑proof capability. It is intended for use in switching regulators, UPS, DC‑DC converters, and general‑purpose power amplifiers.
The datasheet lists absolute maximum ratings such as 800 V drain‑source voltage, 6 A continuous drain current, 30 V gate‑source voltage, and 80 W power dissipation, along with detailed electrical and thermal characteristics, typical output curves, and capacitance values.
| Drain‑Source Voltage (Vds) | 800 V |
|---|---|
| Gate‑Source Voltage (Vgs) | +30 V |
| Continuous Drain Current (Id) | 6 A |
| Pulsed Drain Current (Id(pulse)) | 24 A |
| Maximum Power Dissipation (Pd) | 80 W |
| Operating Temperature Range | -55 °C to +150 °C |
| On‑State Resistance (Rds(on)) | 1.7 – 2.1 mΩ (typical at Id=3 A, Vgs=10 V) |
| Input Capacitance (Ciss) | 1200 – 1800 pF |
| Output Capacitance (Coss) | 120 – 180 pF |
| Thermal Resistance (junction‑to‑ambient) | 125 °C/W |
The device is rated for a maximum drain‑source voltage of 800 V.
It can conduct a continuous drain current of 6 A.
The gate‑source voltage rating is +30 V.
The maximum power dissipation is 80 W.