This document provides the specification information of FDN5630 MOSFET, including features, parameters, and external dimensions.
The FDN5630 is a N‑Channel PowerTrench MOSFET designed for high‑frequency DC/DC converters and other fast‑switching applications. It offers low gate charge, very fast switching, and optimized performance for efficient power conversion.
Key specifications include a 60 V drain‑source rating, 17 A continuous drain current, typical on‑resistance below 100 mΩ at VGS = 10 V, and a total gate charge of about 7 nC. Electrical characteristics such as input capacitance (≈400 pF) and gate‑threshold voltage are also provided.
| Drain‑Source Voltage (VDS) | 60 V |
|---|---|
| Continuous Drain Current (Id) | 17 A |
| On‑Resistance (RDS(on)) | <100 mΩ @ VGS=10 V |
| Gate Threshold Voltage (VGS(th)) | ≈1 V |
| Total Gate Charge (Qg) | 7 nC |
The FDN5630 is rated for a maximum drain‑source voltage of 60 V.
It can conduct up to 17 A continuously.
Typical on‑resistance is less than 100 mΩ at a gate voltage of 10 V.
The total gate charge is about 7 nC.