FM1608 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides data retention for 45 years while eliminating the reliability concerns, functional disadvantages and system design complexities of battery-backed SRAM. Its fast write and high write endurance make it suitable for automotive electronics, consumer electronics and industrial applications.
The FM1608 is a 64‑Kb ferroelectric non‑volatile RAM organized as 8,192 × 8 bits. It offers high endurance (10¹² read/write cycles), 45‑year data retention, and operates over an industrial temperature range of –40 °C to +85 °C. The device is supplied in 28‑pin SOIC or DIP packages and is pin‑compatible with JEDEC 8Kx8 SRAM and EEPROM devices.
The memory features 120 ns access time and 180 ns cycle time, low power consumption (5‑15 mA active, 20 µA standby), and a supply voltage range of 4.5 V to 5.5 V. No battery is required, and writes occur without delay, making the FM1608 suitable for applications requiring frequent or rapid writes in a byte‑wide environment.
| Memory organization | 8,192 × 8 bits (64 Kb) |
|---|---|
| Access time | 120 ns |
| Cycle time | 180 ns |
| Supply voltage | 4.5 V to 5.5 V |
| Active supply current | 5 mA to 15 mA |
| Standby current (CMOS) | 20 µA |
| Data retention | 45 years |
| Endurance | 10¹² read/write cycles |
| Operating temperature range | -40 °C to +85 °C |
| Package options | 28‑pin SOIC or DIP |
The FM1608 has an access time of 120 ns.
Data can be retained for 45 years without power.
The device operates with a supply voltage between 4.5 V and 5.5 V.
The FM1608 is rated for 10¹² read/write cycles.