The FM24CL64 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 45 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM24CL64 performs write operations at bus speed. No write delays are incurred. The next bus cycle may commence immediately without affecting data retention.
The FM24CL64 is a 64‑kilobit ferroelectric non‑volatile RAM organized as 8,192 × 8 bits. It offers unlimited read/write cycles, 45‑year data retention, low power consumption (75 µA active, 1 µA standby) and operates from –40 °C to +85 °C. The device is a drop‑in replacement for EEPROMs and supports legacy timing at 100 kHz and 400 kHz.
The memory uses a standard two‑wire (I²C‑compatible) interface with a maximum bus frequency of 1 MHz. It is available in 8‑pin SOIC and 8‑pin DFN packages, both with “green” packaging options. Pin functions include address selection (A0‑A2), write‑protect (WP), serial data (SDA) and clock (SCL).
| Organization | 8,192 × 8 bits |
|---|---|
| Supply Voltage | 2.7 V – 3.6 V |
| Active Current (100 kHz) | 75 µA |
| Standby Current | 1 µA |
| Operating Temperature Range | -40 °C to +85 °C |
| Data Retention | 45 years |
| Maximum Bus Frequency | 1 MHz |
| Package Types | 8‑pin SOIC and 8‑pin DFN |
The device supports up to 1 MHz bus frequency.
The FM24CL64 provides unlimited read/write cycles.
The standby current is 1 µA.
It operates from –40 °C to +85 °C.