SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS™ Power Transistor is a high voltage and high power field effect transistor produced by Texas Instruments, which has the characteristics of ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability, improved transconductance and 150℃ operating temperature.
This datasheet provides detailed specifications for the Infineon SPP07N60C3 family of high‑voltage MOSFET power transistors, including the SPP07N60C3, SPB07N60C3, SPI07N60C3, and SPA07N60C3 variants. It covers key electrical parameters such as drain current, breakdown voltage, gate charge, and thermal characteristics, as well as package options and ordering codes.
The document also includes characteristic curves for switching behavior, safe operating area, and transient thermal impedance, enabling designers to assess performance under various load and temperature conditions. Contact information for Infineon and legal notices are provided at the end of the file.
| Continuous drain current (Id) at 25°C | 7.3 A |
|---|---|
| Continuous drain current (Id) at 100°C | 4.6 A |
| Pulsed drain current (Id,pulse) | 21.9 A |
| Avalanche energy (single pulse) | 230 mJ |
| Gate threshold voltage (Vgs(th)) | 2.1 – 3.9 V |
| Drain‑source breakdown voltage (Vds) | 600 V |
| Maximum operating temperature | -55 °C to +150 °C |
| Package type (ordering code) | P‑TO220‑3‑1 (SPP07N60C3) |
The device can conduct up to 7.3 A continuously at 25 °C.
The gate threshold voltage ranges from 2.1 V to 3.9 V.
The transistor is rated for operation from –55 °C up to +150 °C.
The single‑pulse avalanche energy is specified as 230 mJ.