Toshiba TLP120-4 GaAs IRED Photo-Transistor Datasheet


Toshiba TLP120-4 GaAs IRED Photo-Transistor Datasheet - cover page
Brand
TLP120
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
7
File format
PDF
File size
349 KB
Published
01 April, 2012
Updated
01 April, 2012
MD5 checksum
17D3F6122C65EAB100916604C97CF7FD

About this manual

The TLP120‑4 is a miniature surface‑mount optocoupler that combines a photo‑transistor with two GaAs infrared emitting diodes in an inverse‑parallel configuration. It provides four isolated channels in a plastic DIP package, suitable for AC input operation.

The datasheet lists electrical ratings such as 80 V collector‑emitter voltage, 50 mA RMS forward current, and a 3750 V rms isolation voltage, along with temperature ranges and switching characteristics for reliable performance in industrial and consumer electronics.

What's inside

  • Maximum Ratings
  • Individual Electrical Characteristics
  • Coupled Electrical Characteristics
  • Isolation Characteristics
  • Switching Characteristics
  • Recommended Operating Conditions

Specifications

Collector‑Emitter Voltage (VCE)80 V (Min.)
Forward Current (RMS)50 mA
Storage Temperature Range-55 °C to 125 °C
Operating Temperature Range-55 °C to 160 °C
Current Transfer Ratio (CTR)50 % (Min.)

Frequently asked questions

What is the maximum collector‑emitter voltage for the TLP120‑4?

The device is rated for a minimum collector‑emitter voltage of 80 V.

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