The TLP120-4 is a miniature flat‑coupler optocoupler from Toshiba that integrates a GaAs infrared emitting diode pair and a photo‑transistor in a plastic DIP package. It provides four isolated channels and is intended for surface‑mount assembly.
Key specifications include a collector‑emitter voltage of 80 V, isolation voltage of 3750 Vrms (1 min), forward current rating of 50 mA RMS, and a typical current transfer ratio of 50 % (minimum) up to 100 % (typical). The device operates over a temperature range of –55 °C to 160 °C and is supplied with 5 V to 48 V.
| Collector‑Emitter Voltage (VCEo) | 80 V (min) |
|---|---|
| Forward Current (RMS) | 50 mA |
| Current Transfer Ratio (CTR) | 50 % (min), up to 100 % typical |
| Junction Temperature (Tj) | 125 °C |
| Package Power Dissipation | 170 mW (typ) |
| Weight | 0.44 g |
The device is rated for a collector‑emitter voltage of 80 V minimum.
The current transfer ratio is at least 50 % and can reach 100 % under typical conditions.
The recommended supply voltage is between 5 V and 48 V.