BTA1300A3 is a low VCE(SAT) PNP epitaxial planar transistor designed especially for use in strobo flash and medium power amplifier applications. It features high DC current gain and excellent hFE linearity. The maximum saturation voltage is -0.5V and the maximum collector current is -2A.
The BTA1300A3 is a low‑voltage saturation PNP epitaxial planar transistor designed for strobe flash and medium‑power amplifier applications. It offers high DC current gain with good hFE linearity, and a low saturation voltage of about –0.5 V at 2 A collector current.
The datasheet lists absolute maximum ratings such as –20 V collector‑base voltage, –10 V collector‑emitter voltage, –2 A DC collector current, and 750 mW power dissipation. It also includes characteristic curves, hFE ranges, and the dimensions of the TO‑92 plastic package with marking information.
| Collector‑Base Voltage (VCBO) | -20 V |
|---|---|
| Collector‑Emitter Voltage (VCEO) | -10 V |
| Emitter‑Base Voltage (VEBO) | 6 V |
| Collector Current (DC) (IC) | -2 A |
| Collector Current (Pulsed) (ICP) | 5 A |
| Power Dissipation (Pd) | 750 mW |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tstg) | -55~+150 °C |
| hFE (1) range | 140–600 |
The maximum DC collector current is –2 A.
The typical hFE (gain) ranges from 140 to 600 at VCE = ‑1 V and IC = ‑0.5 A.
The device can dissipate up to 750 mW.
It is supplied in a 3‑lead TO‑92 plastic package.