This datasheet mainly introduces the characteristics parameters of TIP125/126/127, including collector-base voltage, collector-emitter voltage, emitter-base voltage, collector current, collector current (pulse), base current, collector power consumption (Ta=25℃), collector power consumption (Tc=25℃), junction temperature, storage temperature, etc.
This document provides the technical data for the SemiHow TIP125, TIP126, and TIP127 monolithic Darlington transistors with built‑in base‑emitter shunt resistors. It includes absolute maximum ratings, electrical characteristics, typical performance curves, and mechanical package dimensions.
Key information such as collector‑base voltage, collector‑emitter voltage, DC current gain, and power dissipation limits are listed for each model, along with the TO‑220 (A) and TO‑220 (B) package sizes. This manual is written in Chinese.
| Collector‑Base Voltage (Vcbo) TIP125 | -60 V |
|---|---|
| Emitter‑Base Voltage (Vebo) TIP127 | -5 V |
| Collector Dissipation (Pd) at 25°C | 2 W |
The maximum collector‑emitter voltage for TIP125 is -60 V.