MRF18085ALSR3 is an RF power field effect transistor designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. It is suitable for TDMA, CDMA, and multicarrier amplifier applications. It can be used in Class AB for PCN-PCS/cellular radio and WLL applications. The transistor features high gain, high efficiency, and high linearity. It is internally matched for ease of use and has integrated ESD protection. It is characterized by excellent thermal stability and is available with low gold plating thickness on leads. It is RoHS compliant.
The MRF18085ALSR3 is a lateral N‑channel enhancement‑mode MOSFET designed for GSM and GSM‑EDGE base‑station applications from 1805 MHz to 1880 MHz. It is internally matched, offers high gain, high efficiency and linearity, and includes integrated ESD protection.
Key specifications include a typical power gain of 15 dB at 85 W CW, 52 % efficiency, a drain‑source voltage rating of 65 V, and a total device dissipation of 273 W. The device is supplied in a CASE 465A‑06, STYLE 1 package, available in tape‑and‑reel form.
| Frequency range | 1805‑1880 MHz |
|---|---|
| Maximum output power | 85 W CW |
| Typical power gain | 15 dB |
| Typical efficiency | 52 % at 85 W CW |
| Drain‑Source voltage rating | +65 Vde |
| Gate‑Source voltage rating | +15 Vde |
| Total device dissipation | 273 W |
| Junction‑to‑case thermal resistance | 0.79 °C/W |
| Package type | CASE 465A‑06, STYLE 1 |
The device operates from 1805 MHz to 1880 MHz.
It can deliver up to 85 W continuous wave output.
Typical efficiency is 52 % at 85 W CW.
It is supplied in a CASE 465A‑06, STYLE 1 package.