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- Last added
- 2012-02-14
Featured MRF18085ALSR3 manuals
Freescale MRF18085ALSR3 RF Power Field Effect Transistor Datasheet
The MRF18085ALSR3 is a lateral N‑channel enhancement‑mode MOSFET designed for GSM and GSM‑EDGE base‑station applications from 1805 MHz to 1880 MHz. It is internally matched, offers high gain, high efficiency and linearity, and includes integrated ESD protection.
Key specifications include a typical power gain of 15 dB at 85 W CW, 52 % efficiency, a drain‑source voltage rating of 65 V, and a total device dissipation of 273 W. The device is supplied in a CASE 465A‑06, STYLE 1 package, available in tape‑and‑reel form.
Covers: Technical Data · Maximum Ratings · Thermal Characteristics · Electrical Characteristics · Typical Characteristics · Package Dimensions
Latest MRF18085ALSR3 manuals
Freescale MRF18085ALSR3 RF Power Field Effect Transistor Datasheet
Datasheet 8 pages · 374 KB · ENFreescale MRF18085ALSR3 is an N‑channel RF power MOSFET for GSM/EDGE base stations, delivering up to 85 W output with 52 % efficiency.
Which document do I need?
Datasheet
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in MRF18085ALSR3 manuals
What is the frequency range of the MRF18085ALSR3?
The device operates from 1805 MHz to 1880 MHz.
From: Freescale MRF18085ALSR3 RF Power Field Effect Transistor Datasheet
What is the maximum output power of the MRF18085ALSR3?
It can deliver up to 85 W continuous wave output.
From: Freescale MRF18085ALSR3 RF Power Field Effect Transistor Datasheet