MOTOROLA Manuals

The document mainly contains information about the DataSheet4U.com website, describing its features and characteristics.

BC372/D is a NPN type small signal silicon transistor produced by Motorola. Its maximum collector-emitter voltage is 100V, maximum collector-base voltage is 100V, maximum emitter-base voltage is 12V, maximum collector current is 1.0A, total power dissipation is 625mW, and operating temperature range is -55 to +150°C.

This document is about the characteristics parameters of Motorola's BC368-25 small signal transistor, including maximum ratings, thermal characteristics, and electrical characteristics.

This is the datasheet for the BC327/D PNP silicon small signal transistor.

This is a datasheet for BUD44D2 transistor. It is a high speed and high gain bipolar transistor. It has high dynamic characteristics and minimum spread. It is suitable for light ballast applications.

This file is the MOTOROLA BUID42D data sheet, which introduces the features and characteristics of the product

This file is about MUR10150E, it is a diode product, which can be used in high resolution monitors.

This is the MUR10120E data sheet, which is a 1200 volt blocking voltage diode that can be used in the horizontal deflection circuits of high resolution monitors.

Motorola TMOS Power MOSFET Transistor Device Data is an advanced series of power MOSFETs which utilize Motorola’s High Cell Density TMOS process. HDTMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc–dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.

This document describes the features and characteristics of Motorola TMOS Power MOSFET Transistor. These devices utilize Motorola's High Cell Density TMOS process and contain monolithic back-to-back zener diodes, providing protection against ESD and unexpected transients. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They can withstand high energy in the avalanche and commutation modes, and the drain-to-source diode has a very low reverse recovery time. EZFET devices are designed for low voltage, high speed switching applications with a focus on power efficiency. Typical applications include dc-dc converters, power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives.

Motorola TMOS Power MOSFET Transistor is a medium power surface mount product that utilizes Motorola's High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They can withstand high energy in the avalanche and commutation modes, and the drain-to-source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications include dc-dc converters, power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The specified avalanche energy eliminates guesswork in designs with inductive loads and provides an additional safety margin against unexpected voltage transients.