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ST21Y144 is a smartcard MCU with 144 Kbytes high density EEPROM. Its major applications include mobile communications (GSM and CDMA) and Java applications. Hardware features include enhanced 8/16-bit CPU core, 16 MBytes linear addressable memory, 400 Kbytes user ROM, 8 Kbytes user RAM, and 144 Kbytes user EEPROM.
ST21Y068 is a smartcard MCU with 68 KBytes high density EEPROM. Its major applications include mobile communications (GSM and CDMA) and Java applications. Hardware features include an enhanced 8/16-bit CPU core, 16 MBytes linear addressable memory, 248 Kbytes User ROM, 6 Kbytes User RAM, and 68 Kbytes User EEPROM.
ST19WR02 is a dual contactless smartcard MCU based on ISO 14443 type B with 2 Kbytes EEPROM, integrated with security firewall, DES accelerator, 2 8-bit timers, ISO 3309 CRC calculation block, FIPS 140-2 compliant random number generator, powered by 2.7 V to 5.5 V, external clock frequency up to 10 MHz
This document describes the features and characteristics of the ST19WL34 smartcard MCU, including enhanced 8-bit CPU, extended addressing modes, user ROM, user RAM, user EEPROM, security firewalls, high security features, etc.
ST1335D, ST1336D ST1355D 5-Contact Memory Card IC 272-bit EEPROM With Advanced Security Mechanisms and Inlock System is a 272-bit EEPROM device specially designed for prepaid Phonecard applications, with associated security logic and special fuses to control memory access.
74V1G00 is an advanced high-speed CMOS SINGLE 2-INPUT NAND GATE with sub-micron silicon gate and double-layer metal wiring C2MOS technology, it provides high noise immunity and stable output. It provides power down protection on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.
The 74V1G02 is an advanced high-speed CMOS SINGLE 2-INPUT NOR GATE fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.
The 74V1G03 is an advanced high-speed CMOS SINGLE 2-INPUT OPEN DRAIN NAND GATE fabricated with sub-micron silicon gate double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. This device can, with an external pull-up resistor, be used in wired AND configuration. This device can also be used as a led driver in any other application requiring a current sink. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.
The 74V1G04 is an advanced high-speed CMOS SINGLE INVERTER fabricated with sub-micron silicon gate and double-layer metal wiring C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. Power down protection is provided on all inputs and 0 to 7V can be accepted on inputs with no regard to the supply voltage. This device can be used to interface 5V to 3V.
The 74V1G05 is a single-unit inverter from Philips Corporation, manufactured with sub-micron silicon gate and double-layer metal wiring C2MOS technology. It has the characteristics of high speed, low power consumption, high noise immunity and stable output. The device can be used for interface between 5V and 3V.
