ROHM manuals, page 64
ROHM UMT3906/SST3906/MMST3906 Manual
UMT3906 / SST3906 / MMST3906 is a PNP general purpose transistor produced by ROHM. Its features are BVCEO > −40V (IC= −1mA), which can complement T3904/SST3904/MMST3909 and has low capacitance characteristics. The tube has SC-70 and SC-59 two kinds of package form.
ROHM SST4401/MMST4401 Manual
SST4401 / MMST4401 is a NPN medium power transistor with a maximum collector-emitter reverse breakdown voltage of 40V (IC=1mA). It complements the SST4403 / MMST4403.
ROHM MMST4403 Data Sheet
This document describes the features and characteristics of the SST4403 / MMST4403 PNP Medium Power Transistor (Switching), including product features, absolute maximum ratings, packaging specifications, dimensions, and electrical characteristics.
ROHM UMT2222A/SST2222A/MMST2222A Manual
UMT2222A / SST2222A / MMST2222A is an NPN medium power transistor used for switching applications. It has high voltage capability and complementary models.
ROHM UMT2907A/SST2907A/MMST2907A Manual
The UMT2907A / SST2907A / MMST2907A is ROHM's 1/4 PNP Medium Power Transistor (Switching). Its features are BVCEO< -60V (IC=-10mA) and it is a complement to the UMT2222A / SST2222A / MMST2222A.
ROHM MMSTA28 Data Sheet
SSTA28 / MMSTA28 is a 1/2 NPN general purpose transistor produced by ROHM, which has the feature BVCES < 80V (Ic=100µA).
ROHM PTZ36B Manual
This document describes the applications, external dimensions, voltage regulation, and power dissipation characteristics of the PTZ36B diode.
ROHM QSH29 Manual
QSH29 dual digital transistors have low saturation voltage and high current gain, built-in Zener diode protection, suitable for driving circuits
ROHM QS8F2 Manual
QS8F2 is a low-voltage drive Pch MOSFET+PNP TRANSISTOR produced by ROHM. It has the characteristics of low on-resistance, high power package, and low voltage drive. It is suitable for switching power supplies and other applications.
ROHM QS6Z5 Manual
This document is the data sheet of QS6Z5 from ROHM Co., Ltd. QS6Z5 is a NPN/PNP silicon epitaxial planar transistor with low saturation voltage and high speed switching characteristics.
ROHM QS5Y2 Manual
The document describes the features and characteristics of ROHM's medium power transistor QS5Y2, including low saturation voltage and high speed switching.
ROHM QS5Y1 Manual
QS5Y1 is a low voltage, high power, PNP/NPN transistor. It features low voltage saturation voltage and high switching speed.
ROHM QS5W2 Manual
QS5W2 is a NPN silicon epitaxial planar transistor with low saturation voltage and high switching speed. It is suitable for various switch power supplies and driving power supplies.
ROHM QS5W1 Manual
QS5W1 is a ROHM NPN medium power transistor with low saturation voltage and high switching speed.
ROHM QSZ4 Manual
This document describes the features and applications of the QSZ4 transistors, including low VCE(sat) and small package. The transistors have a silicon epitaxial planar structure. The QSZ4 model consists of two independent transistors and a diode, housed in a TSMT5 package.