Alliance Semiconductor Manuals

The P2681A is a versatile spread spectrum frequency modulator designed specifically for digital camera and other digital video and imaging applications. It reduces electromagnetic interference (EMI) at the clock source, which provides system wide reduction of EMI of all clock dependent signals.

ASM5I961P is a 2.5V or 3.3V compatible, 1:18 PLL based zero delay buffer. With output frequencies of up to 200MHz, output skews of 150pS the device meets the needs of the most demanding clock tree applications.

The ASM1233D-L/1233D/1233M are low-power, 5/3.3V µP Reset, with an active LOW, open-drain output. Maximum supply current over temperature is 15µA for 3.3V devices and 20µA for 5V devices. The ASM1233D-L/1233D/1233M generates an active LOW reset signal whenever the monitored supply is out of tolerance. A precision reference and comparator circuit monitors power supply (VCC) level. The tolerances are 5%, 10% and 15%. When an out-of-tolerance condition is detected, an internal power-fail signal is generated which forces an active LOW reset signal. After VCC returns to an in-tolerance condition, the reset signal remains active for 350ms to allow the power supply and system microprocessor to stabilize. The ASM1233D-L/1233D/1233M is designed with an open- drain output stage and operates over the extended industrial temperature range. These devices are available in compact SOT-223, SO-8 and TO-92 packages. Other low power products in this family include ASM1810/11/ 12/15/16/17.

AS7C3364NTF32B and AS7C3364NTF36B are 3.3V 64K × 32/36 flow-through synchronous SRAMs with NTD™ architecture for efficient bus operation. They feature fast clock to data access, fast OE access time, fully synchronous operation, flow-through mode, asynchronous output enable control, 100-pin TQFP package, byte write enables, operation hold clock enable, multiple chip enables for easy expansion, 3.3V core power supply, 2.5V or 3.3V I/O operation with separate VDDQ, self-timed write cycles, interleaved or linear burst modes, and snooze mode for standby operation.

AS7C3256A-8 is a 3.3V 32K X 8 CMOS SRAM (Common I/O) with high speed, low power consumption and easy expansion.

This document describes the features and characteristics of Alliance Semiconductor's AS7C1024A and AS7C31024A CMOS SRAM products, including industrial and commercial temperature ranges, organization structure, high-speed access time, low power consumption, easy expansion, compatibility, and packaging types.

ASM5I9773A is a low-voltage high-performance 200-MHz PLL-based zero delay buffer designed for high speed clock distribution applications. It features multiple output and input frequency ranges and supports 2.5V or 3.3V operation. The product also has features such as output enable/disable, low output duty cycle variation, and low output-output skew.

This document is about the Alliance Semiconductor AS7C4096A 5.0V 512K × 8 CMOS SRAM product. The product features industrial and commercial temperature range, 524,288 words × 8 bits organization, high-speed access time, low power consumption, and easy memory expansion.

AS7C256A is a 5V 32K X 8 CMOS SRAM (Common I/O) chip produced by Alliance Semiconductor. It has the characteristics of high speed, low power consumption, and easy expansion.

AS7C4098A is a 5.0V 256 K × 16 CMOS SRAM memory chip produced by Alliance Semiconductor. It has industrial and commercial temperature, 262,144 words × 16 bits storage capacity, up to 10/12/15/20 ns address access time, 5/6 ns output enable access time, 990mW/max @ 10 ns ACTIVE current consumption, 55mW/max CMOS STANDBY current consumption, TTL- and CMOS-compatible, three-state I/O, and 44-pin JEDEC standard package.

AS6C4008 is a low power CMOS static random access memory with a storage capacity of 4,194,304 bits and an organization of 524,288 words x 8 bits. It is fabricated using very high performance, high reliability CMOS technology. It operates from a single power supply of 2.7V ~ 5.5V . It has the characteristics of low power consumption and high reliability, and is suitable for battery backup and non-volatile memory applications.

AS7C31026B 3.3 V 64K X 16 CMOS SRAM is a 6 T 0.18 u CMOS technology memory with industrial and commercial versions, center power and ground pins, high speed, low power consumption, TTL compatible, three-state I/O.

The AS6C8008 is a 8,388,608-bit low power CMOS static random access memory organized as 1,048,576 words by 8 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature. The AS6C8008 is well designed for very low power system applications, and particularly well suited for battery back-up nonvolatile memory application. The AS6C8008 operates from a single power supply of 2.7V ~ 5.5V and all inputs and outputs are fully TTL compatible.