Fairchild Manuals

The QSE133 is a silicon photodarlington encapsulated in a wide angle, infrared transparent, black plastic sidelooker package. It features NPN silicon phototransistor, sidelooker package, medium wide reception angle, black epoxy package material, and matched emitter (QEE113).

The QSE122 is a silicon phototransistor produced by Fairchild Semiconductor Corporation. Its features are: sidelooker package type, medium wide reception angle, 50°, black epoxy package, matched emitter QEE113, daylight filter, high sensitivity

QSE1103 is a detector IC which features a photodiode, an amplifier, and an open collector output stage. It has a medium wide reception angle, black epoxy package material, daylight filter, and high sensitivity.

QSD2030F Plastic Silicon Photodiode is a PIN photodiode with wide reception angle (40 degrees), daylight filter, black epoxy package material and color, high sensitivity, peak sensitivity λ = 880nm and 1.245mm x 1.245mm radiant sensitive area

QSD2030 is a plastic silicon photodiode produced by FAIRCHILD. It has high photoelectric conversion efficiency, fast response speed and small size.

The document introduces a phototransistor product named QSD122/123/124, which features high sensitivity, narrow reception angle, and black epoxy packaging.

The QSC112/113/114 is a silicon phototransistor encapsulated in an infrared transparent, black T-1 package from Fairchild Semiconductor Corporation.

QSB363 Subminiature Plastic Silicon Infrared Phototransistor is a NPN silicon phototransistor produced by Fairchild Semiconductor Corporation. It is packaged in a T-3/4 (2mm) surface mount package with a medium wide beam angle of 24° and a black plastic package.

This document describes the features and characteristics of QSB34GR, QSB34ZR, QSB34CGR, and QSB34CZR surface mount silicon pin photodiodes. QSB34GR and QSB34ZR have daylight filters and are suitable for overmount and undermount boards. They feature fast PIN photodiodes, wide reception angle, large chip size, high sensitivity, and low capacitance.

The document describes the parameter test conditions and electrical/optical characteristics of a photoelectric sensor, including peak sensitivity wavelength, wavelength sensitivity range, reception angle, collector-emitter dark current, collector-emitter breakdown current, emitter-collector breakdown current, on-state collector current, saturation voltage, rise time, fall time, etc. It also includes the operating and storage temperature range, soldering temperature, and package dimensions.

The document describes the parameter test conditions and characteristics of a photoelectric sensor, including peak sensitivity wavelength, wavelength sensitivity range, reception angle, dark current, breakdown current, on-state current, saturation voltage, rise time, and fall time.

QRE1113, QRE1113GR are two miniature reflective object sensors from Fairchild Semiconductor Corporation. They have phototransistor output, no contact surface sensing, miniature package, and two leadform options: through hole and SMT gullwing.

This document is the user manual for QRD1113, QRD1114 Reflective Object Sensor, which introduces the product's features and usage methods in detail.