This datasheet provides the technical specifications for the ABB 5STP52U5200 control thyristor. This thyristor features patented free-floating silicon technology, low on-state resistance and switching losses, and is designed for traction, energy and industrial applications.
This datasheet describes the ABB 5STP52U5200 Control Thyristor, a high-power semiconductor device designed for traction, energy, and industrial applications. It features patented free-floating silicon technology and an interdigitated amplifying gate design to ensure optimum power handling capability and low on-state and switching losses.
The document provides comprehensive technical specifications, including maximum rated values for blocking voltage, on-state current, and surge current. It also details characteristic values for switching times, thermal resistance, and gate triggering parameters, alongside mechanical data regarding mounting force and dimensions.
| Max surge peak forward and reverse blocking voltage | 5200 V |
|---|---|
| Max repetitive peak forward and reverse blocking voltage | 5200 V |
| Max crest working forward and reverse voltages | 3470 V |
| Average on-state current | 5060 A |
| RMS on-state current | 7940 A |
| Operating junction temperature range | 125 °C |
| Storage temperature range | -40 to 140 °C |
| Thermal resistance junction to case (double-side cooled) | 4 K/kW |
The device is designed for traction, energy, and industrial applications.
The operating junction temperature range is up to 125 °C.