ABB 5STP33L2800 Control Thyristor Datasheet

Patented free-floating silicon technology


ABB 5STP33L2800 Control Thyristor Datasheet - cover page
Brand
Category
Control Thyristor
Document type
Datasheet
Language
Chinese
Pages
8
File format
PDF
File size
641 KB
Published
23 June, 2014
Updated
25 September, 2023
MD5 checksum
99A1314051DDCC5B5A3AC409CCD93AD8

About this manual

This document is a datasheet for the ABB 5STP33L2800 Control Thyristor, which utilizes patented free-floating silicon technology. It is designed for traction, energy, and industrial applications, offering low on-state and switching losses along with optimum power handling capability. This manual is written in Chinese.

What's inside

  • Maximum rated values
  • Blocking characteristics
  • On-state characteristics
  • Switching characteristics
  • Triggering parameters
  • Thermal resistance
  • On-state voltage model
  • Power loss calculations

Specifications

RMS on-state current (IT(RMS))5880 A
Operating junction temperature (Tvj)125 °C

Frequently asked questions

What is the average on-state current rating for a half sine wave at 70 °C?

The average on-state current is rated at 3740 A under those conditions.

What are the minimum gate trigger voltage and current at a junction temperature of 25 °C?

The minimum gate trigger voltage is 2.6 V and the gate trigger current is 400 mA.

What is the maximum operating junction temperature for this device?

The maximum operating junction temperature range extends up to 125 °C.

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