Patented free-floating silicon technology
This document is a technical datasheet for the ABB 5STP 18F1800 Control Thyristor. It details the device's specifications, including maximum rated values for blocking voltage, on-state current, and switching performance. The thyristor utilizes patented free-floating silicon technology to achieve low on-state and switching losses, making it suitable for traction, energy, and industrial applications.
| Maximum repetitive peak forward and reverse blocking voltage | 1800 V |
|---|---|
| Average on-state current | 1660 A |
| RMS on-state current | 2610 A |
| Peak non-repetitive surge current | 21×103 A |
| Operating junction temperature range | 125 °C |
| Storage temperature range | -40 to 140 °C |
| Gate-trigger voltage | 2.6 V |
| Gate-trigger current | 400 mA |
The thyristor can operate with a maximum junction temperature of 125 °C.
A mounting force between 14 kN and 24 kN is required for proper operation.