This datasheet provides the specifications of the ABB 5STP08G6500 Control Thyristor. The thyristor uses patented free-floating silicon technology, has low on-state and switching losses, is designed for traction, energy and industrial applications, and has optimum power handling capability and interdigitated amplifying gate.
This document is a technical datasheet for the ABB 5STP08G6500 Control Thyristor. It highlights the device's use of patented free-floating silicon technology to achieve low on-state and switching losses, making it suitable for traction, energy, and industrial applications with optimum power handling capability.
The document provides comprehensive maximum rated values and characteristic parameters including blocking voltages (up to 6500 V), average on-state current (720 A), RMS on-state current (1140 A), and peak non-repetitive surge current. It also details mechanical data, thermal resistance specifications for various cooling configurations, and switching characteristics such as turn-off time and reverse recovery charge. This manual is written in Chinese.
| Max surge peak forward and reverse blocking voltage | 6500 V |
|---|---|
| Max repetitive peak forward and reverse blocking voltage | 6500 V |
| Average on-state current | 720 A |
| RMS on-state current | 1140 A |
| Peak non-repetitive surge current | 15.1·103 A |
The maximum average on-state current is 720 A when operating with a half sine wave at a case temperature of 70 °C.
The maximum operating junction temperature is 125 °C.