INFINEON Manuals (Industrial)

The document describes the features and characteristics of the 200-Pin Small Outline Dual-In-Line Memory Modules SO-DIMM DDR SDRAM with model numbers HYS64D32020[H/G]DL–5–C and HYS64D[32020/16000][H/G]DL–6–C.

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This document is about HYB39S256400D[C/T](L) HYB39S256800D[C/T](L) HYB39S256160D[C/T](L) 256-MBit Synchronous DRAM SDRAM products' datasheet.

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The XC164CM is a high-performance 16-bit microcontroller from Infineon's XC166 family, with a powerful integrated peripheral set and high performance and reliable on-chip Flash memory. It is more than just a 16-bit microcontroller, and its huge flexibility combined with a small package makes it suitable for any industrial and automotive applications that require little board space and low cost.

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The Infineon V23870-A211x-xx00 is a bidirectional transceiver supporting 155 Mb/s data rate. It features a multi-quantum well structure FP laser diode with a wavelength of 1310 nm.

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TLE 4296 GV30, GV33, GV50 is a monolithic integrated low drop voltage regulator with three versions of 3.0 V, 3.3 V, 5.0 V, output voltage tolerance ≤ ±4%, output current 30 mA, inhibit input, low quiescent current consumption, wide operating range up to 45 V, wide temperature range -40 °C ≤ Tj ≤ 150 °C, output protected against short circuit, overtemperature protection, reverse polarity proof.

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This is a bi-directional small form factor transceiver designed for full-duplex communication over a single fiber. The single fiber concept saves overall system costs by eliminating one fiber, allowing for doubling of capacity without installing new fibers, and simplifying fiber management.

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This datasheet provides SPI80N06S2-07,SPP80N06S2-07,SPB80N06S2-07 OptiMOS Power-Transistor product characteristics, including model, package, maximum current, maximum power consumption, maximum operating temperature, etc.

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The SPD30N06S2-15 is a N-channel enhancement mode power transistor with a maximum continuous current of 30A, a maximum drain-source breakdown voltage of 55V, a maximum on-resistance of 14.7mΩ, and a working temperature range of -55℃ to 175℃. It has anti-avalanche and dv/dt protection functions.

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TLE 4905/35/35-2/45-2 are unipolar/bipolar magnetic field switches designed specifically for automotive and industrial applications. They feature temperature compensated magnetic performance, digital output signal, compatibility with unipolar and alternating magnetic fields, wide temperature range, reverse polarity protection, and output protection against electrical disturbances.

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This is a datasheet for the XC167CI-16F 16-bit single-chip microcontroller with C166SV2 core, produced by Infineon Technologies AG. It provides information about the features and characteristics of the product.

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This document describes the HYS72T32000GR, HYS72T64001GR, and HYS72T64020GR low profile registered DIMM modules based on DDR2 technology. The modules have capacities of 256MB and 512MB and are designed for 240-pin connector sockets.

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This document is about Infineon's Memory Spectrum product information, introducing various types of memory products, including DDR and DDR2 components and DIMM, CellularRAM, Mobile-RAM, Green DRAM, TwinNAND, SD Cards/MultiMediaCards, etc.

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SDT08S60 thinQ!® SiC Schottky diode is the world's first 600V Schottky diode, using revolutionary semiconductor material - Silicon Carbide, with benchmark switching behavior, no reverse recovery, no temperature influence on the switching behavior, no forward recovery.

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BAR64 series are high voltage current controlled RF resistors suitable for RF attenuators and switches. This series has very low reverse bias capacitance, frequency range of 1MHz to 6GHz, very suitable for RF applications

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BSS87 is an N-channel enhanced logic level MOSFET with a maximum voltage of 240V, RDS(on) of 6 ohms, a continuous current of 0.26A, and a dv/dt of 6kV/µs.

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IPB50R199CP CoolMOSTM Power Transistor is a power transistor with the lowest RON x Qg, ultra-low gate charge, extreme dv/dt rating, high peak current capability, lead-free lead plating and RoHS compliance.

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The IPA50R350CP CoolMOSTM power transistor features the lowest figure of merit RON x Qg, ultra low gate charge, extreme dv/dt rating, high peak current capability, Pb-free lead plating, RoHS compliance. It is qualified according to JEDEC standards. It is designed for hard and soft switching SMPS topologies, CCM PFC for notebook adapters, PDP and LCD TVs, and PWM for notebook adapters, PDP and LCD TVs.

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This document describes the features and characteristics of SMBT2907A/MMBT2907A PNP silicon switching transistors, released on March 20, 2006. These features include high DC current gain, low collector-emitter saturation voltage, etc. The document also provides detailed information on maximum ratings, thermal resistance, and electrical characteristics.

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SPW20N60CFD is a new type of high voltage power transistor with ultra-low gate charge, periodic avalanche rated, extreme dv/dt rated, high peak current capability, intrinsic fast-recovery body diode and extreme low reverse recovery charge.

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