INFINEON Manuals (Industrial)

BFG196 is an NPN silicon RF transistor designed for low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz. It can operate at collector currents ranging from 20 mA to 80 mA. It is also suitable for power amplifiers in DECT and PCN systems. The transistor has a cutoff frequency of 7.5 GHz and a gain of 1.5 dB at 900 GHz. It is an electrostatic discharge sensitive device and requires careful handling.

File format: PDF Size:59 KB

BFG 194 is a RF transistor, mainly used in low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA

File format: PDF Size:68 KB

BFG193 is a NPN silicon RF transistor, suitable for low noise, high gain amplifiers with frequencies up to 2 GHz.

File format: PDF Size:59 KB

BFG 19S is a NPN silicon RF transistor, suitable for low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 10 mA to 70 mA.

File format: PDF Size:111 KB

BFG 135A is a RF transistor produced by Texas Instruments (TI). It has an integrated emitter ballast resistor and a maximum current of 150mA. Its maximum power is 1W and its maximum frequency is 2GHz.

File format: PDF Size:112 KB

BFQ19S is a NPN silicon RF transistor, used for low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA.

File format: PDF Size:37 KB

BF999 is a N-channel MOSFET, suitable for high frequency applications such as FM applications.

File format: PDF Size:136 KB

This document is a test report on BGA622 GPS. The report lists the various performance parameters of BGA622 GPS, such as supply current, insertion power gain, noise figure, input return loss, output return loss, reverse isolation, etc.

File format: PDF Size:94 KB

This document introduces the features and characteristics of the BGA622 Silicon-Germanium Universal Low Noise Amplifier MMIC in 1800-2500 MHz receiver applications, including 70 GHz ft SiGe technology, 50 ohm matched output, pre-matched input, integrated output DC blocking capacitor, integrated RF choke on internal bias network, low current consumption, shutdown or sleep mode, unconditionally stable, low external component count, exceptional noise figure, etc.

File format: PDF Size:246 KB

The BGA619 is an LNA MMIC designed for use in today’s PCS systems which require excellent linearity in each of several gain step modes.

File format: PDF Size:429 KB

BGA616 is a silicon germanium broadband MMIC amplifier produced by Infineon Technologies

File format: PDF Size:95 KB

Secure Mobile Solutions Silicon Discretes Data sheet introduces the features and characteristics of the BGA614 Silicon Germanium Broadband MMIC Amplifier.

File format: PDF Size:490 KB

BGA612 is a silicon germanium broadband MMIC amplifier released by Infineon Technologies AG. The product has good performance characteristics

File format: PDF Size:490 KB

This document is an applications note for BGA430 and BGB540 MMIC, introducing their application in European, Asian and North American DBS LNB I.F. amplifier chains

File format: PDF Size:724 KB

BGA428 is a high-gain, low-noise amplifier MMIC. It is suitable for wireless silicon discretes.

File format: PDF Size:434 KB

BGA420 is a 50ohm gain block produced by SIEGET, with unconditional stability, gain |S21|2 of 13dB, IP3out of 13dBm, noise figure NF of 2.3dB, reverse isolation > 28dB and return loss IN / OUT > 12dB.

File format: PDF Size:141 KB

MMIC BGA416 RF Cascode Amplifier Data sheet, BGA416 is a RF switch device launched by Infineon Technologies AG

File format: PDF Size:66 KB

This document describes the features and characteristics of the P-HEMT CFH800 product produced by Infineon Technologies, including low noise figure and high associated gain, suitable for high IP3 receiver stages up to 4GHz. It is suitable for PCS CDMA and UMTS applications. The product has a low-cost miniature package with SOT343 package.

File format: PDF Size:71 KB

This product is a low noise GaAs HEMT with high associated gain, low cost plastic package, for low noise front end amplifiers up to 20GHz and DBS down converters, fully RF tested at 12GHz

File format: PDF Size:242 KB

CFY67 is a high performance microwave semiconductor device with ultra-low noise characteristics, suitable for professional ultra-low noise amplifiers.

File format: PDF Size:693 KB