The SGT15T60QD1F is a 15 A, 600 V insulated‑gate bipolar transistor with low conduction loss and fast switching for UPS, SMPS and PFC applications.
The SGT15T60QD1F insulated‑gate bipolar transistor (IGBT) from Silan Microelectronics is designed for high‑efficiency power conversion in UPS, SMPS and PFC systems. It features a 15 A continuous collector current, 600 V collector‑emitter voltage rating, and a low on‑state voltage of about 1.9 V at 15 A.
The datasheet provides detailed limit parameters, thermal resistance data, electrical characteristics, typical characteristic curves, and package dimensions (TO‑220F‑3L). It also includes a disclaimer and revision history for reference. This manual is written in Chinese.
| Collector‑Emitter Voltage (VCE) | 600 V |
|---|---|
| Gate‑Emitter Voltage (VGE) | ±20 V |
| On‑state Voltage VCE(sat) (15 A, VGE=15 V) | 1.9 V (typical) |
| Thermal Resistance RθJC (IGBT) | 3.78 °C/W |
| Gate Charge Qg (VCE=400 V, IC=15 A, VGE=15 V) | 77.1 nC |
The device is rated for a maximum collector‑emitter voltage of 600 V.
The typical on‑state voltage VCE(sat) is 1.9 V at 15 A and VGE = 15 V.