The SeCoSGmbH 2SB649/2SB649A datasheet provides electrical characteristics, ratings, and dimensions for these PNP plastic encapsulated transistors.
This datasheet details the electrical parameters of the 2SB649 and 2SB649A PNP transistors, including breakdown voltages, current gains, power dissipation, and package dimensions. It also lists the test conditions and limits for safe operation.
Typical applications include power amplifier circuits and other designs requiring a PNP transistor with a TO‑126 package. The device complies with RoHS requirements and is offered in a halogen‑free version indicated by the “‑C” suffix. This manual is written in German.
| Collector‑emitter saturation voltage (VCE(sat)) | -1 V |
|---|---|
| Collector‑base breakdown voltage (VBR CBO) | -180 V |
| Power dissipation (PCM) | 1 W (Tamb=25 °C) |
| Maximum collector current (ICM) | -1.5 A |
| Collector‑emitter voltage rating (VCEO) | -120 V (2SB649) / -160 V (2SB649A) |
| Package dimensions (TO‑126) | 2.8 ± 0.1 mm × 3.2 ± 0.1 mm |
The 2SB649 is rated for -120 V and the 2SB649A for -160 V collector‑emitter voltage.
The transistors can dissipate up to 1 W at an ambient temperature of 25 °C.
The collector‑base breakdown voltage is specified as -180 V.